HYB3164400ATL-60 데이터 시트보기 (PDF) - Siemens AG
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HYB3164400ATL-60 Datasheet PDF : 26 Pages
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HYB3164(5)400AJ/AT(L)-40/-50/-60
16M x 4-DRAM
AC Characteristics (note: 6,7,8)
TA = 0 to 70 °C,VCC = 3.3 ± 0.3V
AC64-2F
Parameter
Symbol
-40
-50
-60
Unit Note
min. max. min. max. min. max.
Common Parameters
Random read or write cycle time tRC
RAS pulse width
tRAS
CAS pulse width
tCAS
RAS precharge time
tRP
CAS precharge time
tCP
Row address setup time
tASR
Row address hold time
tRAH
Column address setup time
tASC
Column address hold time
tCAH
RAS to CAS delay time
tRCD
RAS to column address delay
tRAD
RAS hold time
tRSH
CAS hold time
tCSH
CAS to RAS precharge time
tCRP
Transition time (rise and fall)
tT
Refresh period for 8k-refresh
tREF
Refresh period for 4k-refresh
tREF
Refresh period for L-versions
tREF
75 – 90 – 110 – ns
40 100k 50 100k 60 100k ns
10 100k 13 100k 15 100k ns
25 – 30 – 40 – ns
10 – 10 – 10 – ns
0
–
0
–
0
–
ns
5
–
7
–
10 –
ns
0
–
0
–
0
–
ns
5
–
7
–
10 –
ns
15 30 17 37 20 45 ns
10 20 12 25 15 30 ns
10 – 13 – 15 – ns
40 – 50 – 60 – ns
5
–
5
–
5
–
ns
1
30 1
30 1
30 ns 7
–
128 –
128 –
128 ms
–
64 –
64 –
64 ms
–
256 –
256 –
256 ms
Read Cycle
Access time from RAS
tRAC
Access time from CAS
tCAC
Access time from column address tAA
OE access time
tOEA
Column address to RAS lead time tRAL
Read command setup time
tRCS
Read command hold time
tRCH
Read command hold time
tRRH
referenced to RAS
CAS to output in low-Z
tCLZ
–
40 –
50 –
60 ns 8, 9
–
10 –
13 –
15 ns 8, 9
–
20 –
25 –
30 ns 8, 10
–
10 –
13 –
15 ns 8
20 – 25 – 30 – ns
0
–
0
–
0
–
ns
0
–
0
–
0
–
ns 11
0
–
0
–
0
–
ns 11
0
–
0
–
0
–
ns 8
Semiconductor Group
9
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