HYB3164400ATL-60 데이터 시트보기 (PDF) - Siemens AG

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HYB3164400ATL-60

16M x 4-Bit Dynamic RAM (4k & 8k Refresh)

Siemens AG 

HYB3164(5)400AJ/AT(L)-40/-50/-60

16M x 4-DRAM

This device is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated on

an advanced second generation 64Mbit 0,35 µm-CMOS silicon gate process technology. The circuit

and process design allow this device to achieve high performance and low power dissipation. This

DRAM operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or

LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)400AJ/AT to be packaged in a

400mil wide SOJ-32 or TSOP-32 plastic package. These packages provide high system bit

densities and are compatible with commonly used automatic testing and insertion equipment. The

HYB3164(5)400ATL parts (L-versions) have a very low power „sleep mode“ supported by Self

Refresh

Ordering Information

Type

HYB 3164400AJ-40

HYB 3164400AJ-50

HYB 3164400AJ-60

HYB 3164400AT-40

HYB 3164400AT-50

HYB 3164400AT-60

HYB 3165400AJ-40

HYB 3165400AJ-50

HYB 3165400AJ-60

HYB 3165400AT-40

HYB 3165400AT-50

HYB 3165400AT-60

HYB 3164(5)400ATL

Ordering

Code

Package

Descriptions

P-SOJ-32-1

P-SOJ-32-1

P-SOJ-32-1

P-TSOPII-32-1

P-TSOPII-32-1

P-TSOPII-32-1

P-SOJ-32-1

P-SOJ-32-1

P-SOJ-32-1

P-TSOPII-32-1

P-TSOPII-32-1

P-TSOPII-32-1

P-TSOPII-32-1

400 mil

400 mil

400 mil

400 mil

400 mil

400 mil

400 mil

400 mil

400 mil

400 mil

400 mil

400 mil

400 mil

DRAM (access time 40 ns)

DRAM (access time 50 ns)

DRAM (access time 60 ns)

DRAM (access time 40 ns)

DRAM (access time 50 ns)

DRAM (access time 60 ns)

DRAM (access time 40 ns)

DRAM (access time 50 ns)

DRAM (access time 60 ns)

DRAM (access time 40 ns)

DRAM (access time 50 ns)

DRAM (access time 60 ns)

Low Power DRAMs

Pin Names

A0-A12

A0-A11

RAS

OE

I/O1-I/O4

CAS

WE

Vcc

Vss

Address Inputs for 8k-refresh versions HYB 3164400AJ/AT(L)

Address Inputs for 4k-refresh versions HYB 3165400AJ/AT(L)

Row Address Strobe

Output Enable

Data Input/Output

Column Address Strobe

Read/Write Input

Power Supply ( + 3.3V)

Ground

Semiconductor Group

2

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