HMC-ABH241 데이터 시트보기 (PDF) - Analog Devices
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HMC-ABH241 Datasheet PDF : 6 Pages
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v03.0412
absolute Maximum Ratings
normal 5.0 V supply to GnD
Gate Bias Voltage
rf input Power (Vdd = +5.0 V)
storage Temperature
Max Peak Relow Temperature
+5.5 Vdc
-1 to +0.3 Vdc
2 dBm
-65 °C to + 150°C
+180 °C
Reliability Information
Junction Temperature to maintain
1 million Hour mTTf
normal Junction Temperature (T = +85 °C)
Thermal resistance (Junction to Die
Bottom)
operating Temperature
+180 °C
+140.6 °C
+50.6 °C/w
-55 °C to + 85°C
HMC-ABH241
Gaas HEMT MMIC MEDIUM POWER
amplifier, 50 - 66 GHz
eLeCTrosTaTiC sensiTiVe DeViCe
oBserVe HanDLinG PreCaUTions
Outline Drawing
Die Packaging Information [1]
standard
alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
noTes:
1. aLL Dimensions are in inCHes [mm].
2. TYPiCaL BonD PaD is .004” sQUare.
3. BaCKsiDe meTaLLiZaTion: GoLD.
4. BaCKsiDe meTaL is GroUnD.
5. BonD PaD meTaLLiZaTion: GoLD.
6. ConneCTion noT reQUireD for UnLaBeLeD BonD PaDs.
7. oVeraLL Die siZe ±.002”
8. Die THiCKness = 0.004”
3
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