HMC-ABH241 데이터 시트보기 (PDF) - Analog Devices

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HMC-ABH241

GaAs HEMT MMIC MEDIUM POWER AMPLIFIER

Analog Devices 

v03.0412

Typical applications

This HmC-aBH241 is ideal for:

• Short Haul / High Capacity Links

• Wireless LAN Bridges

• Military & Space

HMC-ABH241

Gaas HEMT MMIC MEDIUM POWER

amplifier, 50 - 66 GHz

Features

output iP3: +25 dBm

P1dB: +17 dBm

Gain: 24 dB

supply Voltage: +5V

50 ohm matched input/output

Die size: 3.2 x 1.42 x 0.1 mm

Functional Diagram

General Description

The HmC-aBH241 is a four stage Gaas HemT mmiC

medium Power ampliier which operates between

50 and 66 GHz. The HmC-aBH241 provides 24 dB

of gain, and an output power of +17 dBm at 1dB

compression from a +5V supply voltage. all bond pads

and the die backside are Ti/Au metallized and the

ampliier device is fully passivated for reliable operation.

The HmC-aBH241 Gaas HemT mmiC medium

Power ampliier is compatible with conventional die

attach methods, as well as thermocompression and

thermosonic wire bonding, making it ideal for MCM and

hybrid microcircuit applications. all data shown herein

is measured with the chip in a 50 ohm environment

and contacted with rf probes.

Electrical speciications, Ta = +25° C,

Vdd1= Vdd2= Vdd3= 5V, Idd1 + Idd2 + Idd3= 220ma [2]

Parameter

min.

frequency range

Gain

19

input return Loss

output return Loss

output Power for 1 dB Compression (P1dB)

output Third order intercept (iP3)

saturated output Power (Psat)

supply Current (idd1 + idd2 + idd3)

[1] Unless otherwise indicated, all measurements are from probed die

[2] adjust Vgg1 = Vgg2 = Vgg3 between -1V to +0.3V (typ -0.3V) to achieve iddtotal = 220ma

Typ.

50 - 66

24

15

15

17

25

19

220

max.

Units

GHz

dB

dB

dB

dBm

dBm

dBm

ma

1

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Trademarks and registered trademarks arAe tphepplriocpearttyioofntheSir urepsppecotivret:owPnehrso. ne: 978-250-3A3p4p3licaotrionaSpuppsp@orht:iPtthitoen.ec: o1-m800-ANALOG-D

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