BD544 데이터 시트보기 (PDF) - New Jersey Semiconductor
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BD544 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD544
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BD544A
BD544B :-
!„— QOmA • I,-,— n
BD544C
VcE(sat)-i Collector-Emitter Saturation Voltage |c= _3A; IB= -0.3A
VcE(sat)-2 Collector-Emitter Saturation Voltage IC=-5A;IB=-1A
VcE(sat)-3 Collector-Emitter Saturation Voltage IC=-8A;IB=-1.6A
VBE(on)
Base-Emitter On Voltage
lc= -5A; VCE- -4V
BD544
VCE= -40V; VBE= 0
Collector
ICES
Cutoff Current
BD544A
BD544B
VCE= -60V; VBE= 0
VCE= -80V; VBE= 0
BD544C
VcE=-100V;VBE=0
Collector
ICEO
Cutoff Current
BD544/A
VCE= -30V; IB= 0
BD544B/C VCE= -60V; IB= 0
IEBO
hpE-1
Emitter Cutoff Current
DC Current Gain
VEB= -5V; lc= 0
lc=-1A;VCE=-4V
hpE-2
DC Current Gain
lc= -3A ; VCE= -4V
hFE-3
DC Current Gain
Switching Times
lc= -5A ; VCE= -4V
ton
Turn-On Time
'off
Turn-Off Time
IC=-6A;IB1=-IB2=-0.6A;
VBE(0ff)=4V, Ri=5Q
BD544/A/B/C
MIN TYP. MAX UNIT
-40
-60
V
-80
-100
-0.5
V
-0.5
V
-1.0
V
-1.4
V
-0.4
-0.4
mA
-0.4
-0.4
-0.7 mA
-1
mA
60
40
15
0.4
us
0.7
ns
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