BD544 데이터 시트보기 (PDF) - New Jersey Semiconductor
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BD544 Datasheet PDF : 2 Pages
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J^s.mi-Condu.do'i ^PiodueU, iJnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
BD544/A/B/C
DESCRIPTION
• 70 W at 25°C Case Temperature
• Complement to Type BD543/A/B/C
• 8 A Continuous Collector Current
APPLICATIONS
• Designed for high power audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
BD544
-40
BD544A
-60
VCBO
Collector-Base Voltage
V
BD544B
-80
BD544C -100
BD544
-40
BD544A
-60
VCEO
Collector-Emitter Voltage
V
BD544B
-80
BD544C -100
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25°C
PC
Collector Power Dissipation
@ Ta=25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-10
A
70
W
2
150
°c
-65-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
4.17 •CM/
Rth j-a Thermal Resistance, Junction to Ambient 62.5 'CM/
u^
1
,,
: iI
i 2 :••
3
PIN 1.BASE
2. COLLECTOR
3.BW1ITTER
TO-220C package
-* B M
•* V *j |,
Ui
[
--S
*
f
1
__Ht
JQ. oo v
•
if 1 I
K
T i IJV*
-H G [»~
I
f
»t* J
Rr
c
r
mm
DIN WIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 1.30
Q 2.70 2.90
R 2.50 2.70
S 1.29 1.31
U 6.45 6.65
V 8.66 8.86
N.I Scmi-C'niiiluctors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notice. Information furnished by N.I Seini-Coiuluctors is helie\cd to he holh accurate and reliable at the lime of i?.oini!
in press. However. N.I Seiiii'(.'onduelors assumes no responsibility lor an> errors or omissions disc«)vered in its use.
X I Semi-( 'oiulucioi's eneuiii'a.ues ciisloiners to verify thai datasheet are ciiiivnl heloiv pliieing orders.
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