2N3637 데이터 시트보기 (PDF) - TT Electronics.
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2N3637 Datasheet PDF : 3 Pages
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SILICON PNP TRANSISTOR
2N3637
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO(1)
Collector-Emitter
Breakdown Voltage
IEBO
Emitter Cut-Off Current
IC = -10mA
VBE = -5.0V
VBE = -3.0V
IB = 0
IC = 0
IC = 0
VCB = -100V
IE = 0
ICBO
Collector Cut-Off Current
TA = 150°C
VCB = -175V
IE = 0
IC = -0.10mA
VCE = -10V
IC = -1.0mA
VCE = -10V
hFE(1)
DC Current Gain
IC = -10mA
IC = -50mA
VCE = -10V
VCE = -10V
TA = -55°C
IC = -150mA
VCE = -10V
VCE(sat)(1)
Collector-Emitter
Saturation Voltage
IC = -10mA
IC = -50mA
IB = -1.0mA
IB = -5.0mA
VBE(sat)(1)
Base-Emitter
Saturation Voltage
IC = -10mA
IC = -50mA
IB = -1.0mA
IB = -5.0mA
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
hfe
Small-Signal Current Gain
Cobo
Output Capacitance
Cibo
ton
toff
Input Capacitance
Turn-On Time
Turn-Off Time
IC = -30mA
f = 100MHz
IC = 10mA
f = 1.0KHz
VCB = -20V
f = 1.0MHz
VEB = -1.0V
f = 1.0MHz
VCC = -100V
IC = -50mA
VCE = -30V
VCE = 10V
IE = 0
IC = 0
VBE = 4.0V
IB1 = -IB2 = -5mA
Min. Typ. Max. Unit
-175
V
-10
µA
-50
nA
-100
55
90
100
100
50
60
-0.65
-10
µA
-10
300
-0.3
-0.6
V
-0.8
-0.9
100
MHz
80
320
10
pF
75
pF
400
ns
600
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 3068
Website: http://www.semelab-tt.com
Issue 3
Page 2 of 3
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