2N3637 데이터 시트보기 (PDF) - TT Electronics.
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2N3637 Datasheet PDF : 3 Pages
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SILICON PNP TRANSISTOR
2N3637
• General Purpose PNP Silicon Transistor
• High Voltage, High Speed Saturated Switching
• Low Power Amplifier Applications
• Hermetic TO39 Package
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage
-175V
VCEO Collector – Emitter Voltage
-175V
VEBO Emitter – Base Voltage
-5.0V
IC
Continuous Collector Current
-1.0A
PD
Total Power Dissipation at
TA = 25°C
1.0W
Derate Above 25°C
5.71mW/°C
TC = 25°C
5.0W
Derate Above 25°C
28.6mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
175
35
Unit
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 3068
Website: http://www.semelab-tt.com
Issue 3
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