BAP51-03 데이터 시트보기 (PDF) - NXP Semiconductors.
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BAP51-03 Datasheet PDF : 9 Pages
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NXP Semiconductors
BAP51-03
Silicon PIN diode
7 Characteristics
Table 6. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
VF
forward voltage
VR
reverse voltage
IR
reverse current
Cd
diode capacitance
rD
diode forward resistance
τL
charge carrier life time
Conditions
IF = 50 mA
IR = 10 μA
VR = 50 V
f = 1 MHz (see Figure 1)
VR = 0 V
VR = 1 V
VR = 5 V
f = 100 MHz (see Figure 2)
IF = 0.5 mA
IF = 1 mA
IF = 10 mA
when switched from IF = 10 mA
to IR = 6 mA; RL = 100 Ω;
measured at IR = 3 mA
[1] Guaranteed on AQL basis; inspection level S4, AQL 1.0
Min Typ Max Unit
-
0.95 1.1 V
50
-
-
V
-
-
100 nA
-
0.4 -
pF
-
0.3 0.55 pF
-
0.2 0.35 pF
[1] -
5.5 9
Ω
[1] -
3.6 6.5 Ω
[1] -
1.5 2.5 Ω
-
550 -
ns
BAP51-03
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5.1 — 8 February 2019
© NXP B.V. 2019. All rights reserved.
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