NXP Semiconductors
BAP51-03
Silicon PIN diode
5 Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VR
continuous reverse
-
voltage
IF
continuous forward
-
current
Ptot
total power dissipation Tsp ≤ 90 °C
-
Tstg
storage temperature
-65
Tj
junction temperature
-65
6 Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Rth(j-sp)
thermal resistance from junction to
solder point
Conditions
Max
Unit
50
V
50
mA
500
mW
+150
°C
+150
°C
Typ Unit
120 K/W
BAP51-03
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5.1 — 8 February 2019
© NXP B.V. 2019. All rights reserved.
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