TA76432FT(2002) 데이터 시트보기 (PDF) - Toshiba

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TA76432FT
(Rev.:2002)

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

Toshiba 

0.6

TA76432FT

0.5

0.4

PDmax – Ta

Mounted on glass epoxy substate

: 30 ´ 30 ´ 0.8 mm t

Cupper pad area: 35 mm2

0.3

0.2

0.1

0

0 20 40 60 80 100 120 140 160

Ambient temperature Ta (°C)

TA76432FT/FC/F/FR/S

0.6

TA76432FC

0.5

①

0.4

PDmax – Ta

① Mounted on glass epoxy substate

: 30 ´ 30 ´ 0.8 mm t

Cupper pad area: 50 mm2

② Ta = 25°C

0.3

②

0.2

0.1

0

0 20 40 60 80 100 120 140 160

Ambient temperature Ta (°C)

1.2

TA76432F, FR

1.0

PDmax – Ta

① Mounted on ceramic substate

: 15 ´ 15 ´ 0.8 mm t

② Ta = 25°C

0.8

0.6

0.4

0.2

0

0 20 40 60 80 100 120 140 160

Ambient temperature Ta (°C)

1.0

TA76432S

0.8

PDmax – Ta

0.6

0.4

0.2

0

0 20 40 60 80 100 120 140 160

Ambient temperature Ta (°C)

20

Input

10

VKA = VREF

Ta = 25°C

IK – VKA

VKA

IK

0

-10

-1.0

85°C

25°C

Ta = -40°C

-0.5

0

0.5

1.0

1.5

Cathode voltage VKA (V)

300

Input

200

VKA = VREF

Ta = 25°C

100

IK – VKA

VKA

IK

IK min

25°C

0

Ta =

-40°C

-100

-1.0

-0.5

85°C

0

85°C

Ta = -40°C

25°C

0.5

1.0

1.5

Cathode voltage VKA (V)

5

2002-07-12

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