UT61L5128MC-8 데이터 시트보기 (PDF) - Utron Technology Inc

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UT61L5128MC-8

512K X 8 BIT HIGH SPEED CMOS SRAM

Utron Technology Inc 



UTRON

Rev. 1.2

UT61L5128

512K X 8 BIT HIGH SPEED CMOS SRAM

DATA RETENTION CHARACTERISTICS (TA = 0℃ to +70℃)

PARAMETER

SYMBOL

Vcc for Data Retention VDR

Data Retention Current IDR

Chip Disable to Data

Retention Time

tCDR

Recovery Time

tR

TEST CONDITION

CE ≧VCC-0.2V ,

Vcc=2V

CE ≧VCC-0.2V ,

See Data Retention Waveforms (below)

MIN. MAX. UNIT

2.0 3.6 V

-

1 mA

0

- ms

5

- ms

DATA RETENTION WAVEFORM

Low Vcc Data Retention Waveform (1) ( CE controlled)

VCC

CE

Vcc(min.)

tCDR

VIH

VDR ≧ 2V

CE ≧ VCC-0.2V

Vcc(min.)

tR

VIH

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

7

P80061

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