UT61L5128MC-8 데이터 시트보기 (PDF) - Utron Technology Inc
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UT61L5128MC-8 Datasheet PDF : 10 Pages
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UTRON
Rev. 1.2
UT61L5128
512K X 8 BIT HIGH SPEED CMOS SRAM
CAPACITANCE (TA=25℃, f=1.0MHz)
PARAMETER
SYMBOL
MIN.
MAX.
Input Capacitance
CIN
-
8
Input/Output Capacitance
CI/O
-
10
Note : These parameters are guaranteed by device characterization, but not production tested.
UNIT
pF
pF
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0V to 3.0V
3ns
1.5V
CL=30pF, IOH/IOL=-4mA/8mA
AC ELECTRICAL CHARACTERISTICS (TA = 0℃ to 70℃)
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
Output Hold from Address Change
SYMBOL
tRC
tAA
tACE
tOE
tCLZ*
tOLZ*
tCHZ*
tOHZ*
tOH
UT61L5128-8
3.15V~3.6V
MIN. MAX.
8
-
-
8
-
8
-
4
3
-
0
-
-
4
-
4
3
-
UT61L5128-10
3.0V~3.6V
MIN. MAX.
10
-
-
10
-
8
-
5
3
-
0
-
-
5
-
5
3
-
(2) WRITE CYCLE
PARAMETER
SYMBOL
UT61L5128-8
3.15V~3.6V
UT61L5128-10
3.0V~3.6V
MIN. MAX. MIN. MAX.
Write Cycle Time
tWC
8
-
10
-
Address Valid to End of Write
tAW
7
-
8
-
Chip Enable to End of Write
tCW
7
-
8
-
Address Set-up Time
tAS
0
-
0
-
Write Pulse Width
tWP
7
-
8
-
Write Recovery Time
tWR
0
-
0
-
Data to Write Time Overlap
tDW
5.5
-
6
-
Data Hold from End of Write Time tDH
0
-
0
-
Output Active from End of Write
tOW*
3
-
3
-
Write to Output in High Z
tWHZ*
-
4
-
5
*These parameters are guaranteed by device characterization, but not production tested.
UT61L5128-12
3.0V~3.6V
MIN. MAX.
12
-
-
12
-
8
-
6
3
-
0
-
-
6
-
6
3
-
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
UT61L5128-12
3.0V~3.6V
MIN. MAX.
12
-
9
-
9
-
0
-
9
-
0
-
7
-
0
-
0
-
-
6
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
4
P80061
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