US1AL 데이터 시트보기 (PDF) - Jiangsu High diode Semiconductor Co., Ltd
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US1AL Datasheet PDF : 4 Pages
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Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
1.0
0.8
0.6
0.4
0.2
Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5.0mm×5.0mm)Copper Pad Areas
0
0
25
50
75
100
125
150
TL(℃)
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
25
20
8.3ms Single Half Sine Wave
JEDEC Method
15
10
5
1
2
10
20
100
Number of Cycles
FIG.3: TYPICAL FORWARD CHARACTERISTICS
100
TJ=25℃
Pulse width=300us
1% Duty Cycle
10
US1AL-DL
US1GL
1.0
US1JL-ML
0.1
1000
100
10
1.0
FIG.4：TYPICAL REVERSE CHARACTERISTICS
Tj=100℃
Tj=25℃
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VF(V)
0.1
0
20
40
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
trr
IF
VR
IF
RL
0
60
80
100
Voltage(%)
t
IRR
IR
High Diode Semiconductor
2
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