US1AL 데이터 시트보기 (PDF) - Jiangsu High diode Semiconductor Co., Ltd
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US1AL Datasheet PDF : 4 Pages
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US1AL THRU US1ML
SOD1 23FL Plastic-Encapsulate Diodes
High Efficient Rectifier
Features
●Io
1A
●VRRM
50V-1000V
●High surge current capability
●Glass passivated chip
●Polarity: Color band denotes cathode
Applications
● Rectifier
Marking
● US1AL-US1DL : USL
● US1GL : USM
● US1JL-US1ML : USH
SOD-1 23FL
HD FL 46
Item
Symbol Unit
Conditions
US1
AL BL DL FL GL JL KL ML
Repetitive Peak Reverse Voltage VRRM
V
Maximum RMS Voltage
VRMS
50 100 200 300 400 600 800 1000
35 70 140 210 280 420 560 700
Average Forward Current
IF(AV)
A
60Hz Half-sine wave, Resistance
load, Ta=110℃
1.0
Surge(Non-repetitive)Forward
Current
IFSM
A
60Hz Half-sine wave,1 cycle,
Ta=25℃
25
Junction Temperature
TJ
℃
-55 ~ +150
Storage Temperature
TSTG
℃
-55 ~ +150
Electrical Characteristics (Ta=25℃ Unless otherwise specified)
Item
Symbol Unit
Test Condition
US1
1AAL 1BBL 1DDL 1FFL 1GGL 1JJL 1KKL 1MML
Peak Forward Voltage
VFM
V
IFM=1.0A
1.0
1.4
1.7
Peak Reverse Current
Reverse Recovery time
Thermal
Resistance(Typical)
IRRM1
IRRM2
trr
RθJ-A
RθJ-L
μA
ns
℃/W
VRM=VRRM
Ta=25℃
Ta=125℃
IF=0.5A IR=1A
IRR=0.25A
Between junction and ambient
Between junction and terminal
5
50
50
75
751)
271)
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
High Diode Semiconductor
1
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