RFH25P08 데이터 시트보기 (PDF) - Intersil
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RFH25P08 Datasheet PDF : 4 Pages
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RFH25P08, RFH25P10, RFK25P08, RFK25P10
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFH25P08
RFK25P08
RFH25P10
RFK25P10
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 (for TO-218AC). . . . . . . . . . . . . . Tpkg
-80
-80
-25
-60
±20
150
1.2
-55 to 150
300
260
-100
-100
-25
-60
±20
150
1.2
-55 to 150
300
260
V
V
A
A
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFH25P08, RFK25P08
BVDSS ID = 250µA, VGS = 0V
RFH25P10, RFK25P10
Gate Threshold Voltage
Zero Gate Voltage Drain Current
VGS(TH)
IDSS
Gate to Source Leakage Current
IGSS
Drain to Source On Resistance (Note 2)
rDS(ON)
Drain to Source On Voltage (Note 2)
VDS(ON)
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Input Capacitance
CISS
Output Capacitance
COSS
Reverse-Transfer Capacitance
CRSS
Thermal Resistance Junction to Case
RθJC
Source to Drain Diode Specifications
VGS = VDS, ID = 250µA, (Figure 8)
VDS = Rated BVDSS, VGS = 0
VDS = 0.8 x Rated BVDSS, VGS = 0,
TC = 125oC
VGS = ±20V, VDS = 0V
ID = 25A, VGS = -10V, (Figures 6, 7)
ID = -25A, VGS = -10V
ID ≈ 12.5A, VDS = -50V, RGS = 50Ω,
VGS = -10V, RL = 4.0Ω
(Figures 10, 11, 12)
VGS = 0V, VDS = -25V, f = 1MHz
(Figure 9)
RFK25P08, RFK25P10
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = -12.5A
Diode Reverse Recovery Time
trr
ISD = -4A, dISD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN
-80
-100
-2
-
-
-
-
-
-
-
-
-
-
-
-
-
MIN
-
-
TYP
-
-
-
-
-
-
-
-
35
165
270
165
-
-
-
-
TYP
-
300
MAX UNITS
-
V
-
V
-4
V
-1
µA
-25
µA
±100
0.150
-3.75
50
250
400
250
3000
1500
600
0.83
nA
Ω
V
ns
ns
ns
ns
pF
pF
pF
oC/W
MAX UNITS
-1.4
V
-
ns
6-2
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