RFH25P08 데이터 시트보기 (PDF) - Intersil
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RFH25P08 Datasheet PDF : 4 Pages
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Semiconductor
September 1998
RFH25P08, RFH25P10,
RFK25P08, RFK25P10
-25A, -100V and -80V, 0.150 Ohm,
P-Channel Power MOSFETs
[ /Title
(RFH25
P08,
RFH25P
10,
RFK25P
08,
RFK25P
10)
/Subject
(-25A, -
100V, -
80V,
0.150
Ohm, P-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words (-
25A, -
100V a-
80V,
0.150
Ohm, P-
Channel
Power
MOS-
FETs)
/Creator
()
/DOCIN
FO pdf-
mark
Features
• -25A, -100V and -80V
• rDS(ON) = 0.150Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFH25P08
TO-218AC
RFH25P08
RFH25P10
TO-218AC
RFH25P10
RFK25P08
TO-204AE
RFK25P08
RFK25P10
TO-204AE
RFK25P10
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO -218AC
DRAIN
SOURCE
DRAIN
GATE
Description
These are P-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA49230.
Symbol
D
G
S
JEDEC TO-204AE
DRAIN
(FLANGE)
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
6-1
File Number 1632.1
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