TDA1175P 데이터 시트보기 (PDF) - STMicroelectronics
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TDA1175P Datasheet PDF : 13 Pages
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TDA1175P
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C, unless otherwise specified)
Table 3. DC CHARACTERISTICS
(Refer to the test circuits, VS = 35V)
Symbol
Parameter
I2
Pin 2 Quiescent Current
I7
Pin 7 Quiescent Current
–I11
Oscillator Bias Current
–I14
Amplifier Input Bias Current
–I16
Ramp Generator Bias Current
–I16
Ramp Generator Current
Test Conditions
I3 = 0
I6 = 0
V11 = 1V
V14 = 1V
V16 = 0
I9 = 20µA, V16 = 0
Min. Typ. Max. Unit Fig.
7
14 mA 5
8
17 mA 5
0.1 1
µA 4
1
10
µA 5
0.02 0.3 µA 4
18.5 20 21.5 µA 5
∆----I--1---6
I16
VS
V1
V3
V6
V6L
V6H
V8
V9
Ramp Generator Non-linearity ∆V16 = 0 to 12V, I9 = 20µA
0.2 1
%5
Supply Voltage Range
10
35
V
Pin 1 Saturation Voltage to
Ground
I1 = 1mA
1
14
V
Pin 3 Saturation Voltage to
Ground
I3 = 10mA
1.5 2.5
V
4
Qiuescent output Voltage
Vs = 10V, R1 = 1kΩ, R2 = 1kΩ 4.1 4.4 4.7
V
4
Vs = 35V, R1 = 3kΩ, R2 = 1kΩ 8.2 8.8 9.4
V
4
Output Saturation Voltage to
Ground
– I6 = 0.1A
0.9 1.2
V
6
– I6 = 0.8A
1.8 2.2
V
6
Output Saturation Voltage to
Supply
I6 = 0.1A
1.4 2.1
V
7
I6 = 0.8A
2.8 3.1
V
7
Regulated Voltage at Pin 8
6.5 6.7 6.9
V
5
Regulated Voltage at Pin 9
I9 = 20µA
6.6 6.8 7
V
5
--∆----V----8--
∆VS
--∆----V----9--
∆VS
Regulated Voltage Drift with
Supply Voltage
V14
Amplifier Input Reference
Voltage
∆Vs = 10 to 35V
V10 ≤ 0.4V
1
2 mV/V 5
2.20 2.27 2.35 V
3/13
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