BAS321 데이터 시트보기 (PDF) - NXP Semiconductors.
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BAS321 Datasheet PDF : 9 Pages
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Nexperia
1.0
Cd
(pF)
0.8
0.6
0.4
mbg447
300
VR
(V)
200
100
BAS321
General purpose diode
mbk926
0.2
0
2
4
6
8
VR (V)
f = 1 MHz
Tj = 25 °C.
Fig. 5. Diode capacitance as a function of reverse
voltage; typical values.
0
0
50
100
150
200
Tamb (°C)
Fig. 6. Maximum permissible continuous reverse
voltage as a function of the ambient
temperature
11. Test information
tr
tp
RS = 50 Ω
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
10 %
V = VR + IF × RS
Ri = 50 Ω
(1) IR = 3 mA
VR
90 %
mga881
input signal
Fig. 7. Reverse recovery time test circuit and waveforms
t
+ IF
trr
t
(1)
output signal
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
BAS321
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 June 2019
© Nexperia B.V. 2019. All rights reserved
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