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BAS321 데이터 시트보기 (PDF) - NXP Semiconductors.

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BAS321
NXP
NXP Semiconductors. NXP
BAS321 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Nexperia
BAS321
General purpose diode
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BAS321
SOD323
Description
plastic surface-mounted package; 2 leads
Version
SOD323
7. Marking
Table 4. Marking codes
Type number
BAS321
Marking code
A7
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VRRM
repetitive peak reverse
-
voltage
VR
IF
IFSM
IFRM
reverse voltage
-
forward current
[1]
-
non-repetitive peak
tp = 10 ms; Tj(init) = 25 °C; square wave
-
forward current
tp = 1 µs; Tj(init) = 25 °C; square wave
-
tp = 100 µs; Tj(init) = 25 °C; square wave
-
repetitive peak forward tp ≤ 0.5 ms; δ ≤ 0.25
-
current
Ptot
total power dissipation Tamb = 25 °C
Tj
junction temperature
Tstg
storage temperature
[1]
-
-
-65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Max
250
200
250
1.7
9
3
625
300
150
150
Unit
V
V
mA
A
A
A
mA
mW
°C
°C
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Min Typ Max Unit
[1]
-
-
366 K/W
[2]
-
-
130 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Soldering point of cathode tab.
BAS321
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 June 2019
© Nexperia B.V. 2019. All rights reserved
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