BDP951 데이터 시트보기 (PDF) - Infineon Technologies
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BDP951 Datasheet PDF : 4 Pages
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BDP951 ... BDP955
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10 mA, IB = 0
BDP951
80
-
BDP953
100 -
BDP955
120 -
V
-
-
-
Collector-base breakdown voltage
V(BR)CBO
IC = 100 µA, IB = 0
BDP951
100 -
-
BDP953
120 -
-
BDP955
140 -
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 100 V, IE = 0
Collector cutoff current
VCB = 100 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain 1)
IC = 10 mA, VCE = 5 V
IC = 500 mA, VCE = 1 V
IC = 2 A, VCE = 2 V
Collector-emitter saturation voltage1)
IC = 2 A, IB = 0.2 A
Base-emitter saturation voltage 1)
IC = 2 A, IB = 0.2 A
V(BR)EBO 5
ICBO
-
ICBO
-
IEBO
-
hFE
25
40
15
VCEsat
-
VBEsat
-
-
-
-
100 nA
-
20 µA
-
100 nA
-
-
-
-
475
-
-
-
0.8 V
-
1.5
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
fT
-
100
- MHz
Ccb
-
25
- pF
1) Pulse test: t ≤=300µs, D = 2%
2
Aug-06-2001
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