BDP951 데이터 시트보기 (PDF) - Infineon Technologies
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BDP951 Datasheet PDF : 4 Pages
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NPN Silicon AF Power Transistor
For AF driver and output stages
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BDP952 ... BDP956 (PNP)
BDP951 ... BDP955
4
3
2
1
VPS05163
Type
BDP951
BDP953
BDP955
Marking
BDP 951
BDP 953
PDP 955
1=B
1=B
1=B
Pin Configuration
2=C 3=E 4=C
2=C 3=E 4=C
2=C 3=E 4=C
Package
SOT223
SOT223
SOT223
Maximum Ratings
Parameter
Symbol BDP 951 BDP 953 BDP 955 Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 99 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
80
100
120 V
100
120
140
5
5
5
3
A
5
200
mA
500
3
W
150
°C
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
17
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1
Aug-06-2001
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