BB504M 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

부품명

상세내역

일치하는 목록

BB504M

Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

Hitachi -> Renesas Electronics 

BB504M

• 900 MHz Power Gain, Noise Figure Test Circuit

VG1 VG2

C4

C5

VD

C6

Input

R1

R2

C3

G2

G1

L1 L2

R3

RFC

D

Output

L3 L4

S

C1

C2

C1, C2 : Variable Capacitor (10pF MAX)

C3 : Disk Capacitor (1000pF)

C4 to C6 : Air Capacitor (1000pF)

R1 : 120 kΩ

R2 : 47 kΩ

R3 : 4.7 kΩ

L1:

10

21

L3:

29

L2:

26

L4:

18

(Φ1mm Copper wire)

Unit:mm

RFC : Φ1mm Copper wire with enamel 4turns inside dia 6mm

4

Share Link: