BB504M 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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BB504M

Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

Hitachi -> Renesas Electronics 

BB504M

Build in Biasing Circuit MOS FET IC

VHF&UHF RF Amplifier

ADE-208-982E (Z)

6th. Edition

Mar. 2001

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF = 1.75 dB typ. at f =900 MHz

• High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz

• Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.

• Provide mini mold packages; MPAK-4 (SOT-143Rmod)

Outline

MPAK-4

Notes:

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

1. Marking is “DS–”.

2. BB504M is individual type number of HITACHI BBFET.

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