C4261 데이터 시트보기 (PDF) - Inchange Semiconductor
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C4261 Datasheet PDF : 6 Pages
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4261
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0
ICBO
Collector Cutoff Current
VCB= 15V; IE= 0
ICEO
Collector Cutoff Current
VCE= 15V; RBE= ∞
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA
hFE
DC Current Gain
IC= 5mA ; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 20mA ; VCE= 5V
COB
Output Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz
VOSC
Oscillating output voltage
IC= 5mA ; VCC= 5V; f= 930MHz
MIN TYP. MAX UNIT
25
V
0.3 μA
10 μA
1.0 μA
0.3
V
50
180
1.8 2.4
GHz
0.7 1.0 pF
200
mV
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