C4261 데이터 시트보기 (PDF) - Inchange Semiconductor

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C4261

Silicon NPN RF Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN RF Transistor

isc RF Product Specification

2SC4261

DESCRIPTION

·Low Noise

·High Gain

APPLICATIONS

·Designed for use in UHF local oscillator.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

25

V

VCEO Collector-Emitter Voltage

15

V

VEBO Emitter-Base Voltage

3.0

V

IC

Collector Current-Continuous

Collector Power Dissipation

PC

@TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

50

mA

0.1

W

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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