STP22NM60FP 데이터 시트보기 (PDF) - STMicroelectronics
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STP22NM60FP
STMicroelectronics
STP22NM60FP Datasheet PDF : 10 Pages
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STP22NM60 / STP22NM60FP / STB22NM60 / STB22NM60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 200 V, ID = 11 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD = 400 V, ID = 22 A,
VGS = 10 V
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 480 V, ID = 22 A,
RG = 4.7Ω, VGS = 10 V
(see test circuit, Figure 5)
Min.
Typ.
25
20
40
11
25
Max.
71
Unit
ns
ns
nC
nC
nC
Min.
Typ.
13
15
26
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 22 A, VGS = 0
trr
Reverse Recovery Time
ISD = 22 A, di/dt = 100 A/µs,
Qrr
Reverse Recovery Charge
VDD = 100 V, Tj = 25°C
Irrm
Reverse Recovery Current (see test circuit, Figure 5)
trr
Reverse Recovery Time
ISD = 22 A, di/dt = 100 A/µs,
Qrr
Reverse Recovery Charge
VDD = 100 V, Tj = 150°C
Irrm
Reverse Recovery Current (see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
416
5.6
27
544
7.3
28
Max.
20
80
1.5
Unit
A
A
V
ns
µC
A
ns
µC
A
3/10
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