STP22NM60FP 데이터 시트보기 (PDF) - STMicroelectronics
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STP22NM60FP
STMicroelectronics
STP22NM60FP Datasheet PDF : 10 Pages
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STP22NM60 - STP22NM60FP
STB22NM60 - STB22NM60-1
N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK
MDmesh™Power MOSFET
ADVANCED DATA
TYPE
VDSS RDS(on) Rds(on)*Qg ID
STP22NM60
STP22NM60FP
STB22NM60
STB22NM60-1
600 V
600 V
600 V
600 V
< 0.25 Ω
< 0.25 Ω
< 0.25 Ω
< 0.25 Ω
7.6 Ω*nC
7.6 Ω*nC
7.6 Ω*nC
7.6 Ω*nC
22 A
22 A
22 A
22 A
s TYPICAL RDS(on) = 0.19Ω
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE CHARGE
s LOW GATE INPUT RESISTANCE
DESCRIPTION
This improved version of MDmesh™ which is based
on Multiple Drain process represents the new bench-
mark in high voltage MOSFETs. The resulting product
exhibits even lower on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip technique
yields overall performances that are significantly better
than that of similar competition’s products.
3
2
1
TO-220
3
2
1
TO-220FP
123
I2PAK
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing sys-
tem miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Value
Unit
STP(B)22NM60(-1) STP22NM60FP
600
V
600
V
±30
V
22
22 (*)
A
12.6
12.6 (*)
A
80
80(*)
A
192
45
W
1.2
0.36
W/°C
15
V/ns
--
2500
V
–65 to 150
°C
150
°C
(1)ISD ≤22A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*)Limited only by maximum temperature allowed
January 2003
1/10
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