M24256-BFCS6G(2012) 데이터 시트보기 (PDF) - STMicroelectronics

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M24256-BFCS6G
(Rev.:2012)

256-Kbit serial I²C bus EEPROM

STMicroelectronics 

M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF

DC and AC parameters

Table 13. DC characteristics (M24256-BW, device grade 6)

Symbol

Parameter

Test conditions (in addition to those

in Table 6)

Min.

Max. Unit

ILI

Input leakage current

(SCL, SDA, E2, E1,

E0)

VIN = VSS or VCC, device in Standby

mode

-

± 2 µA

ILO

Output leakage

current

SDA in Hi-Z, external voltage applied

on SDA: VSS or VCC

-

VCC = 2.5 V, fc = 400 kHz

(rise/fall time < 50 ns)

-

± 2 µA

1

mA

ICC

Supply current (Read)

VCC = 5.5 V, fc = 400 kHz

(rise/fall time < 50 ns)

2.5 V < VCC < 5.5 V, fc = 1 MHz(1)

(rise/fall time < 50 ns)

ICC0 Supply current (Write) During tW, 2.5 V < VCC < 5.5 V

ICC1

Standby supply

current

Device not selected(3), VIN = VSS or

VCC, VCC = 2.5 V

Device not selected(3), VIN = VSS or

VCC, VCC = 5.5 V

VIL

Input low voltage

(SCL, SDA, WC)

-

2

mA

-

2.5 mA

-

2(2)

mA

-

2

µA

-

3

µA

–0.45 0.3 VCC V

Input high voltage

(SCL, SDA)

VIH

Input high voltage

(WC, E2, E1, E0)

0.7 VCC 6.5

V

0.7 VCC VCC+0.6 V

VOL Output low voltage

IOL = 2.1 mA, VCC = 2.5 V or

IOL = 3 mA, VCC = 5.5 V

-

0.4

V

1. Only for devices operating at fC max = 1 MHz (see Table 17).

2. Characterized value, not tested in production.

3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the

completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction).

Doc ID 6757 Rev 30

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