SSI7N60B 데이터 시트보기 (PDF) - Fairchild Semiconductor
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SSI7N60B Datasheet PDF : 9 Pages
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Typical Characteristics
VGS
Top : 15.0 V
10.0 V
101
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
$ Notes :
1. 250& s Pulse Test
2. TC = 25%
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
5
4
V = 10V
GS
3
V = 20V
GS
2
1
$ Note : TJ = 25%
0
0
5
10
15
20
25
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2000
Ciss
1500
1000
500
0
10-1
C
oss
C
rss
$ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
150oC
100
25oC
10-1
2
-55oC
$ Notes :
1. V = 40V
2. 25DS0& s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150%
25%
$ Notes :
1. V = 0V
2. 25G0S& s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V = 120V
DS
V = 300V
DS
8
V = 480V
DS
6
4
2
$ Note : I = 7.0 A
D
0
0
5
10
15
20
25
30
35
40
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. B, November 2001
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