BUK108-50GS 데이터 시트보기 (PDF) - Philips Electronics
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BUK108-50GS Datasheet PDF : 12 Pages
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Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK108-50GS
INDUCTIVE TURN-ON
VDS
10
BUK108-50GS
VIS / V
td on
5
10%
0
tr
90%
10%
ID / A
0
2
4
6
8
10
time / us
Fig.24. Typical switching waveforms, inductive load.
VDD = 13 V; ID = 3 A; RI = 50 Ω, Tj = 25 ˚C.
INDUCTIVE TURN-OFF
15
BUK108-50GS
td off
10
90%
VDS / V
VIS / V
tf
5
ID / A
90%
10%
0
0
10
20
time / us
Fig.25. Typical switching waveforms, inductive load.
VDD = 13 V; ID = 3 A; RI = 50 Ω, Tj = 25 ˚C.
EDSM%
120
110
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80 100 120 140
Tmb / C
Fig.26. Normalised limiting clamping energy.
EDSM% = f(Tmb); conditions: ID = 15 A; VIS = 10 V
VDS
0
ID
0
VIS
0
V(CL)DSS
VDD
L
+ VDD
VDS
D
TOPFET
I
P
D.U.T.
-
-ID/100
RIS
Schottky
S
R 01
shunt
Fig.27. Clamping energy test circuit, RIS = 50 Ω.
EDSM = 0.5 ⋅ L ID2 ⋅ V(CL)DSS/(V(CL)DSS − VDD)
Idss
1 mA
100 uA
10 uA
typ.
1 uA
100 nA
0
20
40
60
80 100 120 140
Tj / C
Fig.28. Typical off-state leakage current.
IDSS = f(Tj); Conditions: VDS = 40 V; IIS = 0 V.
Iiso normalised to 25 C
1.5
1
0.5
-60
-20
20
60
100
140
180
Tj / C
Fig.29. Normalised input current (normal operation).
IIS/IIS25 ˚C = f(Tj); VIS = 10 V
June 1996
9
Rev 1.000
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