BUK108-50GS 데이터 시트보기 (PDF) - Philips Electronics
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BUK108-50GS Datasheet PDF : 12 Pages
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Philips Semiconductors
PowerMOS transistor
TOPFET
Product specification
BUK108-50GS
IIS / mA
5
BUK108-50GS
4
3
PROTECTION LATCHED
2
RESET
1
NORMAL
0
0
2
4
6
8
10
12
14
VIS / V
Fig.18. Typical DC input characteristics, Tj = 25 ˚C.
IISL = f(VIS); overload protection operated ⇒ ID = 0 A
IS / A
60
BUK108-50GS
50
40
30
20
10
0
0
0.2
0.4
0.6
0.8
1
1.2 1.4
VSD / V
Fig.19. Typical reverse diode current, Tj = 25 ˚C.
IS = f(VSDS); conditions: VIS = 0 V; tp = 250 µs
VDD
RL
D
TOPFET
I
P
D.U.T.
RI
VIS
S
ID measure
0V
0R1
Fig.20. Test circuit for resistive load switching times.
RESISTIVE TURN-ON
10
BUK108-50GS
VIS / V
5
tr
ID / A
90%
10%
10%
0
td on
VDS / V
0
10
20
time / us
Fig.21. Typical switching waveforms, resistive load.
VDD = 13 V; RL = 4 Ω; RI = 50 Ω, Tj = 25 ˚C.
RESISTIVE TURN-OFF
td off
10
90%
BUK108-50GS
VDS / V
VIS / V
tf
5
ID / A
90%
10%
0
0
10
20
time / us
Fig.22. Typical switching waveforms, resistive load.
VDD = 13 V; RL = 4 Ω; RI = 50 Ω, Tj = 25 ˚C.
VDD = VCL
LD
t p : adjust for correct ID
D
TOPFET
I
P
D.U.T.
RI
VIS
S
ID measure
0V
0R1
Fig.23. Test circuit for inductive load switching times.
June 1996
8
Rev 1.000
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