MJE16002 데이터 시트보기 (PDF) - ON Semiconductor

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MJE16002

SWITCHMODE Series NPN Silicon Power Transistors

ON Semiconductor 

MJE16002

TYPICAL ELECTRICAL CHARACTERISTICS

IC

VCE

IB

IC pk

VCE(pk)

90% VCE(pk) 90% IC(pk)

tsv

trv

tfi

tti

90% IB1

tc

10% VCE(pk) 10%

IC pk 2% IC

5.0

4.0

3.0

IB1 = 0.6 A

2.0

1.0

IB1 = 0.3 A

IC = 3.0 A

TJ = 25°C

TIME

Figure 13. Inductive Switching

Measurements

0

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0

VBE(off), REVERSE BASE VOLTAGE (VOLTS)

Figure 14. Peak Reverse Base Current

1

0.7

D = 0.5

0.5

0.3

0.2

0.2

0.1

0.1

0.07

0.05

0.05

0.02

0.03

0.01

0.02

SINGLE PULSE

0.01

0.01 0.02

0.05 0.1 0.2

0.5 1

RθJC(t) = r(t) RθJC

RθJC = 156°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RθJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

2

5

t, TIME (ms)

10 20

50 100 200

500 1 k

Figure 15. Thermal Response (MJE16002 and MJE16004)

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