MJE16002 데이터 시트보기 (PDF) - ON Semiconductor

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MJE16002

SWITCHMODE Series NPN Silicon Power Transistors

ON Semiconductor 

0

≈ −35 V

MJE16002

Table 2. Inductive Load Switching

H.P. 214

or Equiv.

P.G.

0.02 μF

100

20

+

10 μF

−

0.02 μF

1.0 μF

50

+−

+V ≈ 11 V

2N6191

RB1

A

RB2

2N5337

500

100

−V

T1

+V

0V

−V

A

T1

[

Lcoil (ICpk)

VCC

*IB

50

T1 adjusted to obtain IC(pk)

VCEO(sus)

L = 10 mH

RB2 = ∞

VCC = 20 Volts

*Tektronix

*P−6042 or

*Equivalent

Inductive Switching

L = 200 μH

RB2 = 0

VCC = 20 Volts

RB1 selected for desired IB1

Scope — Tektronix

7403 or

Equivalent

*IC

T.U.T.

L

MR856

Vclamp

IC

VCE(pk)

VCE

IB

VCC

RBSOA

L = 200 μH

RB2 = 0

VCC = 20 Volts

RB1 selected for desired IB1

Note: Adjust − V to obtain desired VBE(off) at Point A.

IC(pk)

IB1

IB2

TYPICAL INDUCTIVE SWITCHING WAVEFORMS

tsv

IC(pk) = 3.0 Amps

IB1 = 0.3 Amp

VBE(off) = 5.0 Volts

VCE(pk) = 300 Volts

TC = 25°C

Time Base =

20 ns/cm

tfi, tc

IC(pk) = 3.0 Amps

IB1 = 0.3 Amp

VBE(off) = 5.0 Volts

VCE(pk) = 300 Volts

TC = 25°C

Time Base =

20 ns/cm

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10

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