Philips Semiconductors
Schottky barrier double diode
Product specification
BAT74S
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF
forward voltage
IR
reverse current
trr
reverse recovery time
Cd
diode capacitance
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
CONDITIONS
MAX.
UNIT
see Fig.3
IF = 0.1 mA
240
mV
IF = 1 mA
320
mV
IF = 10 mA
400
mV
IF = 30 mA
500
mV
IF = 100 mA
800
mV
VR = 25 V; note 1; see Fig.4
2
µA
when switched from IF = 10 mA to 5
ns
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA
f = 1 MHz; VR = 1 V; see Fig.5
10
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT363 standard mounting conditions.
CONDITIONS
VALUE
416
UNIT
K/W
1998 Jul 10
4