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BAT74S

Schottky barrier double diode

Philips Electronics 

Philips Semiconductors

Schottky barrier double diode

Product specification

BAT74S

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN. MAX. UNIT

Per diode

VR

IF

IFRM

IFSM

Ptot

Tstg

Tj

Tamb

continuous reverse voltage

continuous forward current

repetitive peak forward current

non-repetitive peak forward current

total power dissipation

storage temperature

junction temperature

operating ambient temperature

Double diode operation

VR

continuous reverse voltage

VR

continuous reverse voltage

IF

continuous forward current

IFRM

repetitive peak forward current

tp ≤ 1 s; δ ≤ 0.5

tp < 10 ms

Tamb ≤ 25 °C; see Fig.2

series connection

tp ≤ 1 s; δ ≤ 0.5

−

30

V

−

200

mA

−

300

mA

600

mA

−

230

mW

−65

+150 °C

−

125

°C

−65

+125 °C

−

30

V

−

60

V

−

110(1) mA

−

200

mA

Note

1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in

reverse and the other in forward operation at the same moment, total device current is max. 200 mA.

1998 Jul 10

3

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