IRFB61N15D 데이터 시트보기 (PDF) - International Rectifier

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IRFB61N15D

HEXFET® Power MOSFET

International Rectifier 

IRFB61N15D

D.U.T

+

‚

-



RG

Peak Diode Recovery dv/dt Test Circuit

+

Circuit Layout Considerations

• Low Stray Inductance

ƒ

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

-

„

+

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

+

- VDD

Driver Gate Drive

P.W.

Period

D=

P.W.

Period

VGS=10V *

D.U.T. ISD Waveform

Reverse

Recovery

Body Diode Forward

Current

Current

di/dt

D.U.T. VDS Waveform Diode Recovery

dv/dt

VDD

Re-Applied

Voltage

Body Diode

Inductor Curent

Forward Drop

Ripple ≤ 5%

ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET® Power MOSFETs

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