IRFB61N15D 데이터 시트보기 (PDF) - International Rectifier

부품명

상세내역

일치하는 목록

IRFB61N15D

HEXFET® Power MOSFET

International Rectifier 

IRFB61N15D

1000

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

1

0.1

0.01

0.1

4.5V

20µs PULSE WIDTH

TJ = 25 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

1

0.1

0.1

20µs PULSE WIDTH

TJ = 175 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100 TJ = 175° C

10

1

0.1

0.01

4

TJ = 25 ° C

V DS = 25V

20µs PULSE WIDTH

6

8

10

12

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

www.irf.com

3.5 ID = 62A

3.0

2.5

2.0

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

Share Link: