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LH28F160BJHE-TTL90 데이터 시트보기 (PDF) - Sharp Electronics

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LH28F160BJHE-TTL90
Sharp
Sharp Electronics Sharp
LH28F160BJHE-TTL90 Datasheet PDF : 47 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
LI-IFI 6504
2
LH28F 160BJHE-TTL90
IGM-BIT ( 1Mbit x16 / 2Mbit x8 )
Boot Block Flash MEMORY
n Low Voltage Operation
- v,,=v(-cw-L.-’ 7V-3.6V Single Voltage
n User-Configurable x8 or x 16 Operation
n High-Performance Read Access Time
- 90ns(Vcc=2.7V-3.6V)
n Operating Temperature
- -40°C to +85”C
I Low Power Management
- Typ. 2uA (V,,=3,OV) Standby Current
- Automatic Power Savings Mode Decreases ICCR in
Static Mode
- Typ. 120pA (V,,=3.OV, T,=+25”C. f=32kHz)
Read Current
n Optimized Array Blocking Architecture
- Two 4K-word (8K-byte) Boot Blocks
- Six 4K-word (8K-byte) Parameter Blocks
- Thirty-one 32K-word (64K-byte) Main Blocks
- Top Boot Location
n Extended Cycling Capability
- Minimum 100,000 Block Erase Cycles
H Enhanced Automated Suspend Options
- Word/Byte Write Suspend to Read
- Block Erase Suspend to Word/Byte Write
- Block Erase Suspend to Read
n Enhanced Data Protection Features
- Absolute Protection with VCCWIVCCWLK
- Block Erase, Full Chip Erase, Word/Byte Write and
Lock-Bit Configuration Lockout during Power
Transitions
- Block Locking with Command and WP#
- Permanent Locking
n Automated Block Erase, Full Chip Erase,
Word/Byte Write and Lock-Bit Configuration
- Command User Interface (CUB
- Status Register (SR)
n SRAM-Compatible Write Interface
n Industry-Standard Packaging
- G-Lead TSOP
n ETOXTkt* Nonvolatile Flash Technology
W CMOS Process (P-type silicon substrate)
w Not designed or rated as radiation hardened
iHARP’s LH28F160BJHE-TTL90 Flash memory is a high-density. low-cost. nonvolatile, read/write storage solution for a
vide range of applications.
,H28F160BJHE-TTL90 can operate at V,,=2.7V-3.6V and Vc-w--. -3 TV-3.6V or 11.7V-12.3V. Its low voltage operation
:apability realize battery life and suits for cellular phone application.
ts Boot, Parameter and Main-blocked architecture, low voltage and extended cycling provide for highly flexible component
uitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal solution for code
- data storage applications.
:or secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to
IRAM, the LH28F160BJHE-TTL90 offers four levels of protection: absolute protection with VccwlVc-wLK, selective
lardware block locking or flexible software block locking. These alternatives Zoive designers ultimate control of their code
ecurity needs.
he LH28F160BJHE-‘ITL90 is manufactured on SHARP’s 0.25pm ETOXT”* process technology. It come in industry-
tandard package: the 4%lead TSOP, ideal for board constrained applications.
ETOX is a trademark of Intel Corporation.
Rev. 1.25

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