C3506 데이터 시트보기 (PDF) - Inchange Semiconductor
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C3506 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ;L=50mH
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A
VBEsat Base-emitter saturation voltage
IC=2A ;IB=0.4A
ICBO
Collector cut-off current
VCB=1000V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=2A ; VCE=5V
fT
Transition frequency
IC=0.2A ; VCE=5V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2A; VCC=250V
IB1=0.4A ,IB2=-0.8A
Product Specification
2SC3506
MIN TYP. MAX UNIT
800
V
1.5
V
1.5
V
50
μA
50
μA
6
4
MHz
1.0
μs
2.5
μs
0.5
μs
2
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