C3506 데이터 시트보기 (PDF) - Inchange Semiconductor
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C3506 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3506
DESCRIPTION
·
·With TO-3PFa package
·High-speed switching
·High collector-base voltage VCBO
·Satisfactory linearity of forward
current transfer ratio hFE
APPLICATIONS
·For high-speed switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICP
Collector current-peak
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
1000
800
7
3
6
2
70
3
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
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