TK20E60U(2014) 데이터 시트보기 (PDF) - Toshiba

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TK20E60U
(Rev.:2014)

MOSFETs Silicon N-Channel MOS (DTMOS II)

Toshiba 

TK20E60U

6. Electrical Characteristics

6.1. Static Characteristics (Ta = 25 unless otherwise specified)

Characteristics

Gate leakage current

Drain cut-off current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source on-resistance

Forward transfer admittance

Symbol

Test Condition

IGSS

IDSS

V(BR)DSS

Vth

RDS(ON)

|Yfs|

VGS = ±30 V, VDS = 0 V

VDS = 600 V, VGS = 0 V

ID = 10 mA, VGS = 0 V

VDS = 10 V, ID = 1 mA

VGS = 10 V, ID = 10 A

VDS = 10 V, ID = 10 A

Min Typ. Max Unit





±1

µA





100

600





V

3.0



5.0

 0.165 0.19

Ω

3

12



S

6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)

Characteristics

Input capacitance

Reverse transfer capacitance

Output capacitance

Switching time (rise time)

Switching time (turn-on time)

Switching time (fall time)

Switching time (turn-off time)

Symbol

Test Condition

Ciss

Crss

Coss

tr

ton

tf

toff

VDS = 10 V, VGS = 0 V, f = 1 MHz

See Figure 6.2.1

Min Typ. Max Unit

 1470 

pF



150



 3500 



40



ns



80





12





100



Fig. 6.2.1 Switching Time Test Circuit

6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)

Characteristics

Total gate charge (gate-source plus

gate-drain)

Gate-source charge

Gate-drain charge

Symbol

Test Condition

Qg

VDD ≈ 400 V, VGS = 10 V, ID = 20 A

Qgs

Qgd

Min Typ. Max Unit



27



nC



16





11



6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)

Characteristics

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Symbol

Test Condition

VDSF

trr

Qrr

IDR = 20 A, VGS = 0 V

IDR = 20 A, VGS = 0 V

-dIDR/dt = 100 A/µs

Min Typ. Max Unit





-1.7

V



450



ns



8.1



µC

3

2014-01-06

Rev.2.0

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