TK20E60U(2014) 데이터 시트보기 (PDF) - Toshiba

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TK20E60U
(Rev.:2014)

MOSFETs Silicon N-Channel MOS (DTMOS II)

Toshiba 

5. Thermal Characteristics

Characteristics

Channel-to-case thermal resistance

Channel-to-ambient thermal resistance

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: VDD = 90 V, Tch = 25 (initial), L = 2.52 mH, RG = 25 Ω, IAR = 10 A

Note 3: Repetitive rating; pulse width limited by maximum channel temperature

TK20E60U

Symbol

Rth(ch-c)

Rth(ch-a)

Max

0.658

83.3

Unit

/W

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

2

2014-01-06

Rev.2.0

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