2N3906(2004) 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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2N3906
(Rev.:2004)

Si-Epitaxial-Planar Switching Transistors

Diotec Semiconductor Germany  

General Purpose Transistors

2N3905, 2N3906

Characteristics (Tj = 25/C)

DC current gain – Kollektor-Basis-Stromverhältnis

- VCE = 1 V, - IC = 0.1 mA

- VCE = 1 V, - IC = 1 mA

- VCE = 1 V, - IC = 10 mA

- VCE = 1 V, - IC = 50 mA

- VCE = 1 V, - IC = 100 mA

2N3905 hFE

2N3906 hFE

2N3905 hFE

2N3906 hFE

2N3905 hFE

2N3906 hFE

2N3905 hFE

2N3906 hFE

2N3905 hFE

2N3906 hFE

Gain-Bandwidth Product – Transitfrequenz

- VCE = 20 V, - IC = 10 mA,

f = 100 MHz

2N3905 fT

2N3906 fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 5 V, IE = ie = 0, f = 100 kHz

CCB0

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- VEB = 0.5 V, IC = ic = 0, f = 100 kHz

CEB0

Noise figure – Rauschzahl

- VCE = 5 V, - IC = 100 :A

2N3905 F

RG = 1 kS f = 10 Hz ...15.7 kHz 2N3906 F

Switching times – Schaltzeiten

turn-on time

turn-off time

ICon = 10 mA,

ton

IBon = - IBoff = 1 mA

toff

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

Kennwerte (Tj = 25/C)

Min.

Typ.

Max.

30

–

–

60

–

–

40

–

–

80

–

–

50

–

150

100

–

300

30

–

–

60

–

–

15

–

–

30

–

–

200 MHz

–

–

250 MHz

–

–

–

–

4.5 pF

–

–

10 pF

–

–

5 dB

–

–

4 dB

–

–

70

–

–

300

RthA

200 K/W 1)

2N3903, 2N3904

1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden

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