2N3906(2004) 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

부품명

상세내역

일치하는 목록

2N3906
(Rev.:2004)

Si-Epitaxial-Planar Switching Transistors

Diotec Semiconductor Germany  

2N3905, 2N3906

PNP

Version 2004-01-20

Standard Pinning

1=C 2=B 3=E

Si-Epitaxial PlanarTransistors

Switching Transistors

PNP

Power dissipation – Verlustleistung

Plastic case

Kunststoffgehäuse

Weight approx. – Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped in ammo pack

Standard Lieferform gegurtet in Ammo-Pack

625 mW

TO-92

(10D3)

0.18 g

Maximum ratings (TA = 25/C)

Collector-Emitter-voltage

B open

Collector-Base-voltage

E open

Emitter-Base-voltage

C open

Power dissipation – Verlustleistung

Collector current – Kollektorstrom (dc)

Peak collector current – Kollektorspitzenstrom

Junction temp. – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

- VCE0

- VCE0

- VEB0

Ptot

- IC

- ICM

Tj

TS

Grenzwerte (TA = 25/C)

2N3905, 2N3906

40 V

40 V

5V

625 mW 1)

100 mA

200 mA

150/C

- 55…+ 150/C

Characteristics (Tj = 25/C)

Collector saturation volt. – Kollektor-Sättigungsspannung

- IC = 10 mA, - IB = 1 mA

- IC = 50 mA, - IB = 5 mA

- VCEsat

- VCEsat

Base saturation voltage – Basis-Sättigungsspannung

- IC = 10 mA, - IB = 1 mA

- IC = 50 mA, - IB = 5 mA

- VBEsat

- VBEsat

Collector cutoff current – Kollektorreststrom

- VCE = 30 V, - VEB = 3 V

- ICEV

Emitter cutoff current – Emitterreststrom

- VCE = 30 V, - VEB = 3 V

- IEBV

Kennwerte (Tj = 25/C)

Min.

Typ.

Max.

–

–

250 mV

–

–

400 mV

–

–

850 mV

–

–

950 mV

–

–

50 nA

–

–

50 nA

1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden

32

Share Link: