STB80PF55_06 데이터 시트보기 (PDF) - STMicroelectronics
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STB80PF55_06
STMicroelectronics
STB80PF55_06 Datasheet PDF : 13 Pages
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STB80PF55 - STP80PF55
Electrical characteristics
Table 5.
Symbol
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Test conditions
VDD=25V, ID=40A,
RG=4.7Ω, VGS=10V
(see Figure 13)
VDD=25V, ID=40A,
RG=4.7Ω, VGS=10V
(see Figure 13)
Vclamp=40V, ID=80A,
RG=4.7Ω, VGS=10V
(see Figure 13)
Min. Typ. Max. Unit
35
ns
190
ns
165
ns
80
ns
60
ns
40
ns
85
ns
Table 6. Source drain diode
Symbol
Parameter
Test condictions
Min Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 80A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80A, di/dt = 100A/µs
VDD = 25V, Tj =150°C
1. Pulse width limited by Tjmax
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
10 A
40 A
1.6 V
110
ns
495
µC
9
A
5/13
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