STB80PF55_06 데이터 시트보기 (PDF) - STMicroelectronics

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STB80PF55_06

P-channel 55V - 0.016Ω - 80A - TO-220 - D2PAK STripFET™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STB80PF55 - STP80PF55

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS breakdown voltage

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

drain current (VGS = 0)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID = 250mA, VGS = 0

VDS = Max rating

VDS = Max rating, TC=125°C

VGS = ±16V

VDS = VGS, ID = 250µA

VGS = 10V, ID = 40A

55

V

1 µA

10 µA

±10 µA

2

3

4V

0.016 0.018 Ω

Table 4. Dynamic

Symbol

Parameter

Test conditions

gfs

Ciss

Coss

Crss

Qg

Qgs

Qgd

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

Total gate charge

Gate-source charge

Gate-drain charge

VDS > ID(on) x RDS(on)max,

ID= 40A

VDS = 25V, f = 1MHz,

VGS = 0

ID = 25A, VDD = 80V,

VGS = 10V

(see Figure 14)

Min. Typ. Max. Unit

32

S

5500

pF

1130

pF

600

pF

190 258 nC

27

nC

65

nC

4/13

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