SKB15N60HS(2006) 데이터 시트보기 (PDF) - Infineon Technologies

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SKB15N60HS
(Rev.:2006)

High Speed IGBT in NPT-technology

Infineon Technologies 

SKB15N60HS

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*) Eon include losses

due to diode recovery

2,0mJ

1,0mJ

*) Eon include losses

due to diode recovery

Ets*

Ets*

1,0 mJ

Eon*

Eoff

0,5 mJ

Eon*

Eoff

0,0mJ

0A

10A

20A

30A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ=150°C,

VCE=400V, VGE=0/15V, RG=23Ω,

Dynamic test circuit in Figure E)

0,0 mJ

0Ω 10Ω 20Ω 30Ω 40Ω 50Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ=150°C,

VCE=400V, VGE=0/15V, IC=15A,

Dynamic test circuit in Figure E)

*) Eon include losses

due to diode recovery

0.75mJ

0.50mJ Ets*

0.25mJ

Eon*

Eoff

0.00mJ

0°C

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE=400V,

VGE=0/15V, IC=20A, RG=23Ω,

Dynamic test circuit in Figure E)

100K/W

D=0.5

0.2

10-1K/W 0.1

0.05

0.02

1 0 -2K /W

0.01

1 0 -3K /W

single pulse

R,(1/W)

0.5321

0.2047

0.1304

0.0027

τ, (s)

0.04968

2.58*10-3

2.54*10-4

3.06*10-4

R1

R2

C1=τ1/R1 C2=τ2/R2

1 0 -4K /W

1µs 10µs 100µs 1ms 10ms 100ms 1s

tP, PULSE WIDTH

Figure 16. IGBT transient thermal resistance

(D = tp / T)

Power Semiconductors

8

Rev 2.2 June 06

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