SKB15N60HS(2006) 데이터 시트보기 (PDF) - Infineon Technologies
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SKB15N60HS Datasheet PDF : 14 Pages
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SKB15N60HS
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Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
-
810
pF
Output capacitance
Coss
VGE=0V,
-
123
Reverse transfer capacitance
Crss
f=1MHz
-
51
Gate charge
QGate
VCC=480V, IC=15A
-
80
nC
VGE=15V
Internal emitter inductance
LE
-
7
nH
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
VGE=15V,tSC≤10µs
-
135
A
VCC ≤ 400V,
Tj ≤ 150°C
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=400V,IC=15A,
VGE=0/15V,
RG=23Ω
Lσ2) =60nH,
Cσ2) =40pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
13
14
209
15
0.32
0.21
0.53
Unit
max.
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
trr
Tj=25°C,
-
111
tS
VR=400V, IF=15A,
-
27
tF
diF/dt=980A/µs
-
83
Diode reverse recovery charge
Qrr
-
580
Diode peak reverse recovery current Irr m
-
14
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
-
520
ns
nC
A
A/µs
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance L σ a nd Stray capacity C σ due to test circuit in Figure E.
Power Semiconductors
3
Rev 2.2 June 06
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