P1014AP 데이터 시트보기 (PDF) - ON Semiconductor
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P1014AP Datasheet PDF : 23 Pages
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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014
ELECTRICAL CHARACTERISTICS (For typical values TJ = 25°C, for min/max values TJ = −40°C to +125°C, Max TJ = 150°C,
VCC = 8.0 V unless otherwise noted.)
Rating
Pin Symbol Min
Typ
Max Unit
SUPPLY SECTION AND VCC MANAGEMENT
VCC Increasing Level at which the Current Source Turns−off
VCC Decreasing Level at which the Current Source Turns−on
Hysteresis between VCCOFF and VCCON
VCC Decreasing Level at which the Latch−off Phase Ends
VCC Decreasing Level at which the Internal Latch is Released
Internal IC Consumption, MOSFET Switching at 65 kHz (Note 2)
Internal IC Consumption, MOSFET Switching at 100 kHz (Note 2)
Internal IC Consumption, MOSFET Switching at 130 kHz (Note 2)
Internal IC Consumption, Latch−off Phase, VCC = 6.0 V
Active Zener Voltage Positive Offset to VCCOFF
Latch−off Current
NCP1012/13/14
NCP1010/11
0°C < TJ < 125°C
−40°C < TJ < 125°C
0°C < TJ < 125°C
−40°C < TJ < 125°C
POWER SWITCH CIRCUIT
Power Switch Circuit On−state Resistance
NCP1012/13/14 (Id = 50 mA)
TJ = 25°C
TJ = 125°C
NCP1010/11 (Id = 50 mA)
TJ = 25°C
TJ = 125°C
Power Switch Circuit and Startup Breakdown Voltage
(ID(off) = 120 mA, TJ = 25°C)
Power Switch and Startup Breakdown Voltage Off−state Leakage Current
TJ = −40°C (Vds = 650 V)
TJ = 25°C (Vds = 700 V)
TJ = 125°C (Vds = 700 V)
Switching Characteristics (RL = 50 W, Vds Set for Idrain = 0.7 x Ilim)
Turn−on Time (90%−10%)
Turn−off Time (10%−90%)
1 VCCOFF
7.9
1
VCCON
6.9
1
−
−
1
VCClatch
4.4
1 VCCreset
−
1
ICC1
−
1
ICC1
−
1
ICC1
−
1
ICC2
−
1
Vclamp
140
1
ILatch
6.3
5.8
5.8
5.3
8.5
7.5
1.0
4.7
3.0
0.92
0.95
0.98
290
200
7.4
7.4
7.3
7.3
9.1
V
8.1
V
−
V
5.1
V
−
V
1.1 mA
1.15 mA
1.2 mA
−
mA
300 mV
mA
9.2
9.2
9.0
9.0
5
RDSon
−
11
19
22
38
5
BVdss
700
−
W
16
24
35
50
−
V
IDS(OFF)
5
−
5
−
5
−
5
ton
−
5
toff
−
mA
70
120
50
−
30
−
ns
20
−
10
−
INTERNAL STARTUP CURRENT SOURCE
High−voltage Current Source, VCC = 8.0 V
NCP1012/13/14
0°C < TJ < 125°C
−40°C < TJ < 125°C
NCP1010/11
0°C < TJ < 125°C
−40°C < TJ < 125°C
High−voltage Current Source, VCC = 0
CURRENT COMPARATOR TJ = 25°C (Note 2)
Maximum Internal Current Setpoint, NCP1010 (Note 3)
Maximum Internal Current Setpoint, NCP1011 (Note 3)
Maximum Internal Current Setpoint, NCP1012 (Note 3)
Maximum Internal Current Setpoint, NCP1013 (Note 3)
Maximum Internal Current Setpoint, NCP1014 (Note 3)
Default Internal Current Setpoint for Skip−Cycle Operation, Percentage of
Max Ip
1
IC1
1
IC2
mA
5.0
8.0
10
5.0
8.0
11
5.0
8.0
10.3
5.0
8.0
11.5
−
10
−
mA
5 Ipeak (22) 90
100
110 mA
5 Ipeak (22) 225
250
275 mA
5 Ipeak (11) 225
250
275 mA
5 Ipeak (11) 315
350
385 mA
5 Ipeak (11) 405
450
495 mA
−
ILskip
−
25
−
%
Propagation Delay from Current Detection to Drain OFF State
Leading Edge Blanking Duration
2. See characterization curves for temperature evolution.
3. Adjust di/dt to reach Ipeak in 3.2 msec.
−
TDEL
−
TLEB
−
125
−
ns
−
250
−
ns
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